• Produktbild: Introduction to VLSI Silicon Devices
  • Produktbild: Introduction to VLSI Silicon Devices
Band 10

Introduction to VLSI Silicon Devices Physics, Technology and Characterization

Fr. 191.00

inkl. gesetzl. MwSt., Versandkostenfrei


Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

31.12.1985

Verlag

Springer Us

Seitenzahl

570

Maße (L/B/H)

23.4/15.6/3.3 cm

Gewicht

1007 g

Auflage

1986

Sprache

Englisch

ISBN

978-0-89838-210-5

Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

31.12.1985

Verlag

Springer Us

Seitenzahl

570

Maße (L/B/H)

23.4/15.6/3.3 cm

Gewicht

1007 g

Auflage

1986

Sprache

Englisch

ISBN

978-0-89838-210-5

Herstelleradresse

Libri GmbH
Europaallee 1
36244 Bad Hersfeld
DE

Email: gpsr@libri.de

Noch keine Bewertungen vorhanden

Verfassen Sie die erste Bewertung zu diesem Artikel

Helfen Sie anderen Kundinnen und Kunden durch Ihre Meinung.

Kundinnen und Kunden meinen

Bewertungen (0)

  • Produktbild: Introduction to VLSI Silicon Devices
  • Produktbild: Introduction to VLSI Silicon Devices
  • 1. Resistances and Their Measurements.- 1.0 Introduction.- 1.1 Resistance.- 1.2 Resistivity.- 1.3 Current Density.- 1.4 Electric Field, Mobility, Conductivity and Resistivity.- 1.5 Carrier Concentrations.- 1.6 Sheet Resistance and Techniques for its Evaluation.- 1.7 Line Width and Mask Alignments.- 1.8 The Spreading Resistance Technique.- Summary of Important Equations.- References.- 2. PN Junctions.- 2.0 Introduction.- 2.1 Description of PN Junction.- 2.2 Fabrication of A PN Junction.- 2.3 Characteristics of the PN Junction at Thermal Equilibrium.- 2.4 Forward Biased PN Junction.- 2.5 Reverse Biased PN Junction.- Summary of Important Equations.- References.- 3. The Bipolar Transistor.- 3.0 Introduction.- 3.1 Transistor Action.- 3.2 A Typical Bipolar Process Sequence.- 3.3 Injection Parameters, Wide Base Region.- 3.4 Injection Parameters, Narrow Base Region.- 3.5 The Schottky Barrier Diode.- 3.6 Maximum Transistor Voltage Limitations.- 3.7 High-Current Transistor Characteristics.- 3.8 High-Frequency and Switching Behavior.- Summary of Important Equations.- References.- 4. The MIS CV Technique.- 4.0 Introduction.- 4.1 The Insulator Capacitance.- 4.2 The Ideal MOS System.- 4.3 Description and Analysis of an Ideal Cv-Curve.- 4.4 The Real MIS Structure.- 4.5 Methods to Evaluate CV-Plots.- Summary of Important Equations.- References.- 5. Surface Effects on PN Junctions.- 5.0 Introduction.- 5.1 Ideal Structure without Applied Bias.- 5.2 Ideal Structure with Applied Bias on the Gate.- 5.3 Effect of Insulator Charge and Work-Function Difference.- 5.4 Body-Effect or Substrate Bias Sensitivity.- 5.5 Reverse Current.- 5.6 Effect of Gate Bias on the Junction Breakdown Voltage.- 5.7 Injection of Hot Carriers into the Insulator.- 5.8 Surface Effects on the Junction Forward Characteristics.- Summary of Important Equations.- References.- 6. Insulated-Gate-Field-Effect-Transistor (IGFET).- 6.0 Introduction.- 6.1 Principle of Operation.- 6.2 Fabrication Techniques.- 6.3 Current-Voltage Characteristics, Long and Wide Channel, Uniform Substrate.- 6.4 Non-Uniform Substrate Profile.- 6.5 Second-Order Effects, Device Limits and Design Considerations.- 6.6 Types of IGFETs and Applications.- 6.7 CMOS.- Summary of Important Equations.- References.- Universal Physical Constants.- Conversion Factors.- The Greek Alphabet.