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Produktbild: Introduction to Microelectronic Fabrication: Volume 5 (Modular Series on Solid State Devices)

Introduction to Microelectronic Fabrication: Volume 5 (Modular Series on Solid State Devices)

Fr. 111.00

inkl. gesetzl. MwSt., Versandkostenfrei

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

29.05.2024

Verlag

Pearson Studium

Seitenzahl

336

Maße (L/B/H)

23.5/17.8/1.9 cm

Gewicht

540 g

Auflage

2

Sprache

Englisch

ISBN

978-0-201-44494-0

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

29.05.2024

Verlag

Pearson Studium

Seitenzahl

336

Maße (L/B/H)

23.5/17.8/1.9 cm

Gewicht

540 g

Auflage

2

Sprache

Englisch

ISBN

978-0-201-44494-0

Herstelleradresse

Pearson
St.-Martin-Straße 82
81541 München
DE

Email: salesde@pearson.com

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  • Produktbild: Introduction to Microelectronic Fabrication: Volume 5 (Modular Series on Solid State Devices)

  • (NOTE: Each chapter concludes with Summary, References, and Problems.)

    Preface.

    1. An Overview of Microelectronic Fabrication.

    A Historical Perspective. An Overview of Monolithic Fabrication Processes and Structures. Metal-Oxide-Semiconductor (MOS) Processes. Basic Bipolar Processing. Safety.

    2. Lithography.

    The Photolithographic Process. Etching Techniques. Photomask Fabrication. Exposure Systems. Exposure Sources. Optical and Electron Microscopy. Further Reading.

    3. Thermal Oxidation of Silicon.

    The Oxidation Process. Modeling Oxidation. Factors Influencing Oxidation Rate. Dopant Redistribution During Oxidation. Masking Properties of Silicon Dioxide. Technology of Oxidation. Oxide Quality. Selective Oxidation and Shallow Trench Formation. Oxide Thickness Characterization. Process Simulation.

    4. Diffusion.

    The Diffusion Process. Mathematical Model for Diffusion. The Diffusion Coefficient. Successive Diffusions. Solid-Solubility Limits. Junction Formation and Characterization. Sheet Resistance. Generation-Depth and Impurity Profile Measurement. Diffusion Simulation. Diffusion Systems. Gettering.

    5. Ion Implantation.

    Implantation Technology. Mathematical Model for Ion Implantation. Selective Implantation. Junction Depth and Sheet Resistance. Channeling, Lattice Damage, and Annealing. Shallow Implantation. Source Listing

    6. Film Deposition.

    Evaporation. Sputtering. Chemical Vapor Deposition. Epitaxy. Further Reading.

    7. Interconnections and Contacts.

    Interconnections in Integrated Circuits. Metal Interconnections and Contact Technology. Diffused Interconnections. Polysilicon Interconnections and Buried Contacts. Silicides and Multilayer-Contact Technology. The Liftoff Process. Multilevel Metallization. Copper Interconnects and Damascene Processes. Further Reading.

    8. Packaging and Yield.

    Testing. Wafer Thinning and Die Separation. Die Attachment. Wire Bonding. Packages. Flip-Chip and Tape-Automated-Bonding Processes. Yield. Further Reading.

    9. MOS Process Integration.

    Basic MOS Device Considerations. MOS Transistor Layout and Design Rules. Complementary MOS (CMOS) Technology. Silicon on Insulator.

    10. Bipolar Process Integration.

    The Junction-Isolated Structure. Current Gain. Transit Time. Basewidth. Breakdown Voltages. Other Elements in SBC Technology. Layout Considerations. Advanced Bipolar Structures. Other Bipolar Isolation Techniques. BICMOS.

    11. Processes for Microelectromechanical Systems—MEMS.

    Mechanical Properties of Silicon. Bulk Micromachining. Silicon Etchants. Surface Micromachining. High-Aspect-Ratio Micromachining: The LIGA Molding Process. Silicon Wafer Bonding. IC Process Compatibility.

    Answers to Selected Problems.

    Index.