Huang, K: Novel Structural Polycrystalline Silicon Thin Film Fabrication and Characterization of Polycrystalline Silicon Thin Film Transistor with Buried Insulator
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- Englisch ausgewählt
Fr. 104.00
inkl. gesetzl. MwSt.,
Beschreibung
Produktdetails
Einband
Taschenbuch
Erscheinungsdatum
01.09.2011
Verlag
VDMSeitenzahl
192
Maße (L/B/H)
22/15/1.2 cm
Gewicht
308 g
Sprache
Englisch
ISBN
978-3-639-12987-8
This thesis is mainly surveyed the characteristics of polycrystalline silicon thin film transistor (TFT) putting forward and probing into four kinds of novel buried-oxide structures. With these structures, we can improve the shortcoming of the traditional polycrystalline silicon TFT, like leakage current (On/Off state current), subthreshold swing, floating body effect (kink effect), self-heating effect, and short channel effect etc.. Novel buried-oxide polysilicon thin-film transistors (poly-Si TFTs) are proposed and demonstrated to be superior to their conventional counterparts. Furthermore, these novel structures are simple to fabricate, practical, and completely compatible on CMOS technology. Otherwise, the poly-Si TFT with/without NH3 annealing and body implantation, and their corresponding effects, have also been investigated and discussed in depth.
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