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  • Produktbild: Molecular Electronics Materials, Devices and Applications
  • Produktbild: Molecular Electronics Materials, Devices and Applications

Molecular Electronics Materials, Devices and Applications

Fr. 138.00

inkl. gesetzl. MwSt., Versandkostenfrei

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

19.10.2010

Verlag

Springer Netherland

Seitenzahl

196

Maße (L/B/H)

23.5/15.5/1.2 cm

Gewicht

335 g

Auflage

Softcover reprint of hardcover 1st ed. 2008

Sprache

Englisch

ISBN

978-90-481-7926-8

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

19.10.2010

Verlag

Springer Netherland

Seitenzahl

196

Maße (L/B/H)

23.5/15.5/1.2 cm

Gewicht

335 g

Auflage

Softcover reprint of hardcover 1st ed. 2008

Sprache

Englisch

ISBN

978-90-481-7926-8

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: GPSR Kontakt

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  • Produktbild: Molecular Electronics Materials, Devices and Applications
  • Produktbild: Molecular Electronics Materials, Devices and Applications
  • List of Figures. List of Tables. Part I General introduction Part II State of the Art 1. MOLECULAR ELECTRONICS MATERIALS. 1 Nanowires. 2 Molecular-gated semiconductor nanowire transistor. 3 Carbon nanotubes. 4 Nanotechnology and molecules. 2. MOLECULAR ELECTRONIC ARCHITECTURES. 1 Short overview on Artificial Neural Network. 2 Nanocell: The bottom-up approach. 3 Nanofabric: A programmable and defct-tolerant architecture. 4 Nanoscale FPGA 5 Micro-nano interface. 6 Neuromorphic architecture. 7 Molecular realization of Quantum Cellular Automata. 8 The molecular crossbar. 3. NON-VOLATILE MEMORY CELLS. 1 Short introduction. 2 Conventional non-volatile memory cells. 3 NAND and OR architectures. 4 Emerging non-volatile memories. 5 Memory cell based on nanotechnology. Part III Case study 4. MODELING OF THE MOLECULAR NWFET TRANSISTOR. 1 VHDL-AMS. 2 Modeling. 3 Simulation. 5. PRESENTATION OF THE MOLECULAR MEMORY CELL. 1 The molecular memory cell. 2 The simple memory cell. 3 Speed optimized modeling of the memory cell. 4 Conclusion and perspectives. 6. TECHNOLOGICAL DISPERSIONS TOLERANT ARCHITECTURES. 1 Architecture generation tool. 2 Architectures. 3 Conclusion and perspectives. Appendices. A Simulation results. 1 Raw data for method Reference. 2 Raw data for method Error Sensing. 3 Raw data for method Loop Error Sensing. 4 Raw data for method ECC H4/3b. 5 Raw data for method ECC H5/4b. 6 Raw data for method ECC H5/3b. B VHDL-AMS code examples. 1 VHDL-AMS source code of themodeling of amolecular-gated semiconductor nanowire transistor. 2 VHDL-AMS source code of themodeling of amolecular-gated semiconductor nanowire transistor. 3 VHDL-AMS source code example of a ECC memory state machine (H5/3b). 4 VHDL-AMS source code example: MyPackageH5/3b. References. Index.