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  • Produktbild: Amorphous and Crystalline Silicon Carbide III
  • Produktbild: Amorphous and Crystalline Silicon Carbide III
Band 56

Amorphous and Crystalline Silicon Carbide III and Other Group IV — IV Materials. Proceedings of the 3rd International Conference, Howard University, Washington, D. C., April 11 – 13, 1990

Aus der Reihe Springer Proceedings in Physics

Fr. 137.00

inkl. gesetzl. MwSt., Versandkostenfrei

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

09.02.2012

Herausgeber

Gary L. Harris + weitere

Verlag

Springer Berlin

Seitenzahl

372

Maße (L/B/H)

23.5/15.5/2.1 cm

Gewicht

587 g

Auflage

1992

Sprache

Englisch

ISBN

978-3-642-84404-1

Beschreibung

Portrait

Of particular interest to materials scientists and semiconductor physicists, this volume reports new techniques in the growing field of silicon carbide and other IV-IV materials.

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

09.02.2012

Herausgeber

Verlag

Springer Berlin

Seitenzahl

372

Maße (L/B/H)

23.5/15.5/2.1 cm

Gewicht

587 g

Auflage

1992

Sprache

Englisch

ISBN

978-3-642-84404-1

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: GPSR Kontakt

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  • Produktbild: Amorphous and Crystalline Silicon Carbide III
  • Produktbild: Amorphous and Crystalline Silicon Carbide III
  • I Growth of Single Crystal SiC.- SiC-Based Solid Solutions: Technology and Properties.- Growth and Morphology of 6H-SiC Prepared by the Sublimation Method.- Growth of 6H-SiC Single Crystals by the Modified Sublimation Method.- A System for Growth of Bulk Beta-SiC by Sublimation.- Sublimation Vapor Transport Growth of Silicon Carbide.- Defects and Polytypism of SiC Bulk Single Crystals.- II Growth and Characterization of Amorphous SiC.- Growth Mechanism of Hydrogenated Amorphous SiC from a Glow-Discharge Plasma.- Amorphous Silicon-Carbon Alloy Prepared by the Controlled Plasma Magnetron Method.- Study of Substrate Doping and Amorphous SiC:H/Crystalline Si Interface with a MIS Structure.- Effects of Operating Temperatures on Optical and Electrical Properties of Amorphous SiC Deposited by Photo-CVD.- Polycrystalline Silicon-Silicon Carbide Thin Films Produced by Plasma Enhanced CVD.- Modeling of Wide Bandgap Microcrystalline Silicon Carbide/Crystalline Silicon Heterojunctions.- Hydrogen Depth Profile Measurement in a-Si1-x Cx:H Films by Elastic Recoil Detection.- Infrared, Raman and ESR Studies of a-SiC Prepared by the Polymer Route.- Amorphous SiC/Si Heterojunctions Prepared by the Polymer Route.- III Materials and Device Properties.- Crystal Growth of ?-SiC on Si and Its Application to MOSFETs.- Sensor Properties of n-Type ?-SiC.- Charge Trapping in Cubic Silicon Carbide MIS Capacitors.- Development Prospects for SiC Bipolar Transistors and Thyristors.- Investigation of the Blue Electroluminescence Efficiency of Epitaxial SiC-6H Structures.- Spectroscopic Studies of Donors in 3C-SiC Films.- Electron Irradiation Effects on CVD-Grown 3C-SiC Epilayers.- Residual Carriers and ESR Centers in Epitaxially Grown 3C-SiC.- Transport Measurements and Shallow Donors in Cubic SiC.- Photoluminescence Properties of 6H-SiC Grown by Step-Controlled Epitaxy.- Comparison of Experimental Laue Transmission and Reflection Patterns for 4H, 6H, 15R, and 3C SiC.- Ohmic Contacts to Silicon Carbide Devices.- Surface Micromachining of n-Type ?-SiC Using Laser Assisted Photoelectrochemical Etching.- Microplasmas and Current Fluctuations in Silicon Carbide p-n Structures.- Positron Diagnostics of Radiation Defects in Silicon Carbide.- The Temperature Dependence of Impact Ionization in Silicon Carbide, and Related Effects.- The Wannier-Stark Effect and N-Shaped Volt-Ampere Characteristics in a Superlattice of 6H-SiC.- Physical and Practical Aspects of Electron Heating in Superlattice ?-SiC.- Investigation of Structural Defects in SiC Crystals by Transmission Electron Microscopy.- Study of Al/Thermal Oxide/?-SiC MOS Diodes.- Dissipative Structures in Hot Electron-Hole Plasma of Hexagonal Silicon Carbide (?-SiC).- Characterization of the Electronic and Atomic Structure of Surfaces and Interfaces of SiC/Si Grown at Low Temperature.- Two-Dimensional Modeling of New Silicon Carbide Devices.- Optical Properties of 3C-SiC Under High Hydrostatic Pressure.- Minority Carrier Diffusion Length in Epitaxially Grown SiC(6H) pn Diodes.- Contact Resistance of High-Temperature SiC Metallization.- Breakdown in Silicon Carbide pn Junctions.- SiC p—n Junction Photosensitivity in the Long-Wavelength Region.- IV Techniques for Thin Film Growth.- Low Pressure Growth of Silicon Carbide on Silicon in a Vertical Reactor.- Selective Growth of Cubic SiC on Si by Chemical Vapor Deposition.- Shortwave SiC-LEDs Prepared by the Sublimation “Sandwich Method”.- Liquid-Phase Epitaxy of Silicon Carbide at Temperatures of 1100°-1200°C.- Growth and Characterizaton of 3C-SiC and 6H-SiC Films on 6H-SiC Wafers.- The Effects of Impurities on Mass Transport and the Growth Mechanism of SiC Epitaxial Layers Grown by Sublimation.- Doping Peculiarities of SiC Epitaxial Layers Grown by the Sublimation “Sandwich Method”.- Formation of a Silicon Heterostructure by Germanium Ion Implantation.- Low Temperature Selective Deposition of Diamond Thin Films.- Two-Dimensional Computational Modeling of Silicon Carbide Deposition in a Vertical CVD Reactor.- Epitaxial Growth of 6H-SiC by Chemical Vapor Deposition.- Index of Contributors 371.