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Produktbild: Process Technology for Semiconductor Lasers
Band 30

Process Technology for Semiconductor Lasers Crystal Growth and Microprocesses

Aus der Reihe Springer Series in Materials Science

Fr. 72.90

inkl. gesetzl. MwSt., Versandkostenfrei

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

21.12.2011

Verlag

Springer Berlin

Seitenzahl

169

Maße (L/B/H)

23.5/15.5/1.1 cm

Gewicht

295 g

Auflage

Softcover reprint of the original 1st ed. 1996

Sprache

Englisch

ISBN

978-3-642-79578-7

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

21.12.2011

Verlag

Springer Berlin

Seitenzahl

169

Maße (L/B/H)

23.5/15.5/1.1 cm

Gewicht

295 g

Auflage

Softcover reprint of the original 1st ed. 1996

Sprache

Englisch

ISBN

978-3-642-79578-7

Herstelleradresse

Springer-Verlag GmbH
Tiergartenstr. 17
69121 Heidelberg
DE

Email: ProductSafety@springernature.com

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  • Produktbild: Process Technology for Semiconductor Lasers
  • 1. Introduction.- 1.1 Outline of Semiconductor Laser Theory.- 1.2 Semiconductor Lasers in Opto-electronics.- 1.3 Necessary Technology for Semiconductor Lasers.- 1.4 Brief History of Semiconductor Lasers.- 1.5 Typical Semiconductor Lasers.- 2. Materials for Semiconductor Lasers.- 2.1 III-V Compound Semiconductors.- 2.1.1 Band Structure of III-V Semiconductors.- 2.1.2 Other Characteristics of III-V Compound Semiconductors.- 2.2 Crystals for Visible to Near-Infrared-Wavelength Emission Semiconductor Lasers.- 2.2.1 Importance of Visible to Near-Infrared-Wavelenth Laser Emission.- 2.2.2 Crystal Materials for the Near-Infrared Region.- 2.2.3 Crystal Materials for Visible Laser Emission.- 2.3 Crystals for Semiconductor Lasers with 1-µm and Longer Emission Wavelengths.- 2.3.1 Importance of the 1-µm Emission Wavelength.- 2.3.2 Crystal Materials for the 1-µm Emission Wavelength.- 2.3.3 Longer-Wavelength Materials.- 3. Basic Design of Semiconductor Lasers.- 3.1 Double Heterostructures and Their Design.- 3.1.1 Double Heterostructures.- 3.1.2 Design of Double-Heterostructure Lasers.- 3.1.3 Energy-Band Diagram of DH Lasers.- 3.1.4 Optical Properties of DH Lasers.- a) Step-Index Planar Waveguide.- b) TE Modes.- c) TM Modes.- d) Mode-Confinement Factor.- 3.1.5 Threshold Current of DH Lasers.- 4. Epitaxy of III–V Compound Semiconductors.- 4.1 III-V Substrates for Semiconductor Lasers.- 4.1.1 Necessity of Substrates.- 4.1.2 Substrate Quality Requirements.- 4.2 Bulk Growth Techniques.- 4.3 Heteroepitaxial Techniques.- 4.3.1 Liquid-Phase Epitaxy.- 4.3.2 Vapor-Phase Epitaxy.- 4.3.3 Metalo-Organic Chemical-Vapor Deposition.- 4.3.4 Molecular Beam Epitaxy.- 4.3.5 Chemical Beam Epitaxy.- 5. Liquid Phase Epitaxy and Growth Technology.- 5.1 Outline of an LPE System.- 5.2 Reactors.- 5.2.1 Horizontal Reactor.- 5.2.2 Vertical Reactor.- 5.3 Loading Sub-System.- 5.4 Pump and Exhaust Sub-System.- 5.5 Gas-Flow Sub-System.- 5.6 Heating Sub-System.- 5.7 Maintenance.- 5.7.1 Maintenance of a Graphite Boat.- 5.7.2 Baking of the Reactor.- 5.8 Liquid-Phase Epitaxy.- 5.9 LPE Process.- 5.9.1 GaAlAs/GaAs System.- a) Determination of the Source-Material Quantity.- b) LPE Procedure.- 5.9.2 GaInAsP/InP System.- 5.9.3 Other Materials.- a) Visible-Light Semiconductor Lasers.- b) Longer-Wavelength (? > 2µm) Semiconductor Lasers.- 6. Vapor Phase and Beam Epitaxies.- 6.1 Metal-Organic Chemical Vapor Deposition (MOCVD).- 6.1.1 MOCVD System.- 6.1.2 Example of MOCVD Growth.- a) A Double-Heterostructure Wafer.- b) Semiconductor Multilayer Reflector.- 6.1.3 Characterization.- a) Evaluation of the Nominal Threshold-Current Density.- b) Reflectivity of a Multilayer Bragg Reflector.- 6.2 Molecular-Beam and Chemical-Beam Epitaxy.- 6.2.1 Background.- 6.2.2 Chemical Beam Epitaxial System.- 6.2.3 Preparation for Growth.- 6.2.4 GaAs and InP Growth.- 6.2.5 GaxIn1-xAsyP1-y Growth.- 6.2.6 Doping-Level Control.- 6.2.7 Summary of CBE.- 7. Characterization of Laser Materials.- 7.1 Evaluation of Laser Wafers.- 7.2 Measurement of Lattice Mismatch.- 7.3 Measurement of the Impurity Concentration.- 7.3.1 Four-Point Probe Method.- 7.3.2 Schottky Method.- 7.3.3 Hall Measurement.- 7.4 Photoluminescence.- 7.5 Measurement of the Refractive Index.- 7.6 Misfit Dislocation.- 8. Semiconductor-Laser Devices — Fabrication and Characteristics.- 8.1 Fabrication of Fundamental Laser Devices.- 8.1.1 Broad Contact Lasers.- 8.1.2 Stripe-Geometry Lasers.- 8.2 Current Injection and Contacts.- 8.2.1 Current/Voltage Characteristics.- 8.2.2 Current Injection.- 8.3 Evaluation of the Threshold-Current Density.- 8.4 Gain Bandwidth and Oscillation Spectra.- 8.5 Output and Efficiency of Semiconductor Lasers.- 8.6 Near-Field Pattern and Far-Field Pattern.- 8.7 Temperature Characteristics.- 8.8 Reliability.- 9. Mode-Control Techniques in Semiconductor Lasers.- 9.1 Transverse-Mode Characteristics and the Single-Mode Condition.- 9.1.1 Necessity of Transverse-Mode Stabilization.- 9.1.2 Equivalent Refractive-Index Method.- 9.1.3 Eigenvalue Equation of a Guided Mode.- 9.2 Longitudinal-Mode Control.- 9.3 Burying Epitaxy on Mesas and V-Grooves.- 9.3.1 Structures of Index-Guided Lasers.- 9.3.2 Fabrication of Transverse-Mode-Controlled Structures.- 9.4 Mass-Transport Technique.- 9.5 Selective Meltback Technique.- 9.5.1 Selective Meltback Characteristics.- 9.5.2 Application to an Inner-Stripe Structure.- 9.5.3 Application to BH Stripe Lasers.- 9.6 Overgrowth on Gratings.- 9.7 Growth of Quantum Wells.- 9.8 Growth of Multilayer Bragg Mirrors.- 10. Surface-Emitting Lasers.- 10.1 The Concept of Surf ace-Emitting Lasers.- 10.2 Structure and Characteristics.- 10.2.1 GaInAsP/InP Surface-Emitting Lasers.- 10.2.2 GaAlAs/GaAs SE Lasers.- 10.3 Semiconductor Multi-Layer Structure.- 10.4 Two-Dimensional Arrays.- 10.5 Ultralow-Threshold Devices.- 10.6 Future Prospects.- References.