A Treatise on the Development of the Silicon Drift Detector Device design, Technology development & Characterization
-
- Englisch ausgewählt
Fr. 122.00
inkl. gesetzl. MwSt.,
Beschreibung
Produktdetails
Einband
Taschenbuch
Erscheinungsdatum
19.12.2014
Verlag
LAP LAMBERT Academic PublishingSeitenzahl
376
Maße (L/B/H)
22/15/2.4 cm
Gewicht
578 g
Sprache
Englisch
ISBN
978-3-659-64486-3
The work presented in this book gives a glimpse into the various stages involved in the development of a Silicon Drift Detector (SDD) with on-chip JFET. The development of the SDD was carried out in phased manner, with the proto-type development being carried out at the Indian Institute of Technology-Bombay (IIT-B) followed by development of commercial grade SDDs at Bharat Electronics Ltd., Bangalore (BEL). Simulations in TCAD (device and process) were employed to arrive at optimized parameter values for the SDD with on-chip JFET. Various different kinds of SDDs and JFETs were designed to study the effect of a variation in design parameters on the performance parameters. The fabrication process for proto-type SDD was formulated for achieving a high breakdown voltage (>100V) coupled with a low leakage current achievable at IIT-B. Further, designs of the SDD with on-chip JFET were generated for fabrication at BEL. Fabrication of both SDD and JFET over high resistivity Silicon posed a significant technological challenge mitigated by process optimization in TCAD.
Kundinnen und Kunden meinen
Verfassen Sie die erste Bewertung zu diesem Artikel
Helfen Sie anderen Kund*innen durch Ihre Meinung