Synthesis & Characterization of Nanodot Embedded MOS-C for the NVM An Innovative Approach in Nano-Technology
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- Englisch ausgewählt
Fr. 51.90
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Beschreibung
Produktdetails
Einband
Taschenbuch
Erscheinungsdatum
12.01.2015
Verlag
LAP LAMBERT Academic PublishingSeitenzahl
56
Maße (L/B/H)
22/15/0.4 cm
Gewicht
102 g
Sprache
Englisch
ISBN
978-3-659-67039-8
Achieving lower dimensional electronic device in today's world has been increased enormously. Miniaturization technique has been improved in connection to maintain noble device properties. Processes incorporated to nano range fabrication are always intricate, as various quantum size effects play important role in this regime. Understanding the physics of low-dimensional systems and the operation of next-generation electronics will be helpful in bringing revolutionary changes to mankind. Phenomena surrounding the nanoparticles have been discussed and the discussion has been divided into two broad categories: synthesis and characterization of the nanoparticles embedded MOS capacitor. Capacitance peaks in the inversion region due to carrier tunneling into the quantum dot and Coulomb blockade charging in quantum dot has been observed, which elucidated the charge storing phenomena of nanoparticles.
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