Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
-
- Hardcover ausgewählt
- Taschenbuch
- eBook
-
Sprache:Englisch
Fr. 192.00
inkl. gesetzl. MwSt.,
Beschreibung
Produktdetails
Einband
Gebundene Ausgabe
Erscheinungsdatum
24.05.2018
Abbildungen
XIII, 183 illus., 165 illus. in color., schwarz-weiss Illustrationen, farbige Illustrationen
Herausgeber
Gaudenzio Meneghesso + weitereVerlag
SpringerSeitenzahl
232
Maße (L/B/H)
24.1/16/2 cm
Gewicht
541 g
Auflage
1st edition 2018
Sprache
Englisch
ISBN
978-3-319-77993-5
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.
- Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
- Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;
- Enables design of smaller, cheaper and more efficient power supplies.
Noch keine Bewertungen vorhanden
Verfassen Sie die erste Bewertung zu diesem Artikel
Helfen Sie anderen Kundinnen und Kunden durch Ihre Meinung.