Springer Handbook of Crystal Growth
Aus der Reihe
Springer Handbooks
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- Taschenbuch
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Sprache:Englisch
Fr. 419.00
inkl. gesetzl. MwSt.,
Beschreibung
Produktdetails
Einband
Set mit diversen Artikeln
Erscheinungsdatum
04.08.2010
Abbildungen
XXXVIII, 1251 illus. in color. With DVD., farbige Illustrationen
Herausgeber
Govindhan Dhanaraj + weitereVerlag
Springer BerlinSeitenzahl
1818
Maße (L/B/H)
24.7/21.6/7.9 cm
Gewicht
3179 g
Auflage
2010
Sprache
Englisch
ISBN
978-3-540-74182-4
Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
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