Band 133
Technology of Gallium Nitride Crystal Growth
Aus der Reihe
Springer Series in Materials Science
-
- Hardcover ausgewählt
- Taschenbuch
- eBook
-
Sprache:Englisch
Fr. 242.00
inkl. gesetzl. MwSt.,
Beschreibung
Produktdetails
Einband
Gebundene Ausgabe
Erscheinungsdatum
24.06.2010
Abbildungen
XXII, 200 illus., schwarz-weiss Illustrationen
Herausgeber
Dirk Ehrentraut + weitereVerlag
Springer BerlinSeitenzahl
326
Maße (L/B/H)
24.1/16/2.6 cm
Gewicht
751 g
Auflage
2010
Sprache
Englisch
ISBN
978-3-642-04828-9
Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970.
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