Geschäftskunden Kundenprogramme
Vor Ort
Merkzettel Warenkorb
  • Produktbild: Very Large Scale Integration (VLSI)
  • Produktbild: Very Large Scale Integration (VLSI)
Band 5

Very Large Scale Integration (VLSI) Fundamentals and Applications

Aus der Reihe Springer Series in Electronics and Photonics

Fr. 137.00

inkl. gesetzl. MwSt., Versandkostenfrei

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

22.04.2012

Herausgeber

D.F. Barbe

Verlag

Springer Berlin

Seitenzahl

304

Maße (L/B/H)

23.5/15.5/1.8 cm

Gewicht

487 g

Auflage

Second Edition 1982

Sprache

Englisch

ISBN

978-3-642-88642-3

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

22.04.2012

Herausgeber

D.F. Barbe

Verlag

Springer Berlin

Seitenzahl

304

Maße (L/B/H)

23.5/15.5/1.8 cm

Gewicht

487 g

Auflage

Second Edition 1982

Sprache

Englisch

ISBN

978-3-642-88642-3

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: GPSR Kontakt

Noch keine Bewertungen vorhanden

Verfassen Sie die erste Bewertung zu diesem Artikel

Helfen Sie anderen Kundinnen und Kunden durch Ihre Meinung.

Kundinnen und Kunden meinen

Bewertungen (0)
  • Produktbild: Very Large Scale Integration (VLSI)
  • Produktbild: Very Large Scale Integration (VLSI)
  • 1. Introduction.- 1.1 Outlook.- 1.2 Scope of this Volume.- 1.3 Summary.- References.- 2. VLSI Device Fundamentals.- 2.1 Fundamentals of VLSI Device Improvements.- 2.1.1 Relative Importance of Chip Area, Circuit Innovation, and Minimum Dimension.- 2.1.2 Device Scaling Fundamentals.- 2.2 Problem Areas for VLSIC’s.- 2.2.1 Interconnections.- 2.2.2 Ionizing Particle Effects on Dynamic Logic Circuits.- 2.2.3 Active Scaling Parasitics.- 2.3 Small-Geometry MOS Anomalies.- 2.3.1 Short Channel Vt Effect.- 2.3.2 Narrow Width Vt Effect.- 2.3.3 Combination Narrow Width/Short Channel (Minimum Size) Vt Effect.- 2.3.4 Short Channel Limit for Subthreshold Conduction Effects.- 2.4 VLSIC Projections.- 2.5 Conclusions.- References.- 3. Advanced Lithography.- 3.1 Optical Lithography.- 3.1.1 Optical Resists.- 3.1.2 Contact and Proximity Printing.- 3.1.3 Projection Printing.- 3.2 Electron Lithography.- 3.2.1 Resists.- 3.2.2 Mask Generation.- 3.2.3 Electron Optics.- 3.2.4 Vector Scan.- 3.2.5 Raster Scan.- 3.2.6 Variable Beam Shape.- 3.2.7 Electron Projection.- 3.3 X-Ray Lithography.- 3.3.1 Resists.- 3.3.2 Proximity Printing.- 3.3.3 X-Ray Sources.- 3.3.4 Masks.- 3.3.5 Synchrotron Radiation.- 3.4 Ion Lithography.- 3.5 Conclusion.- References.- 4. Computer Aided Design for VLSI.- 4.1 What is Computer Aided Design?.- 4.2 History.- 4.3 State-of-the-Art.- 4.3.1 Specification.- 4.3.2 Synthesis.- 4.3.3 Simulation.- 4.3.4 Testability.- 4.3.5 Partitioning.- 4.3.6 Layout.- 4.3.7 Topological Analysis.- 4.3.8 Timing Analysis.- 4.3.9 Documentation.- 4.3.10 Data Management.- 4.3.11 Summary of Current Use of CAD.- 4.4 Perspective.- 4.4.1 The Connectivity Problem.- 4.4.2 The Layout Problem.- 4.4.3 The Problem with Mistakes.- 4.5 Management of Complexity.- 4.6 Structured Design.- 4.7 Functional Design Tools.- 4.7.1 Specification.- 4.7.2 Synthesis.- 4.7.3 Simulation.- 4.7.4 Test Development.- 4.7.5 Physical Constraints on the Functional Design.- 4.8 Physical Design Tools.- 4.8.1 Partitioning.- 4.8.2 Physical Layout.- 4.8.3 Topological Analysis.- 4.8.4 Timing Analysis.- 4.9 Design Management.- 4.9.1 Data Base.- 4.9.2 Data Management System.- 4.9.3 Data Configuration Management.- 4.9.4 Product Development Plan.- 4.9.5 Management Information System.- 4.10 Conclusion.- References.- 5. GaAs Digital Integrated Circuits for Ultra High Speed LSI/VLSI.- 5.1 Performance Advantages Expected for GaAs ICs.- 5.2 Circuit Approaches for GaAs Digital Logic ICs.- 5.2.1 Enhancement Mode FET Logic Approaches.- 5.2.2 Single Supply Enhancement — Depletion Mode MESFET Logic.- 5.2.3 D-MESFET Approach/Buffered FET Logic.- 5.2.4 D-MESFET Schottky Diode-FET Logic (SDFL).- 5.2.5 Transferred Electron Logic Device (TELD) Approach.- 5.3 GaAs Integrated Circuits: Fabrication Technology.- 5.3.1 Evolution of GaAs Process Technology.- 5.3.2 Mesa Implanted D-MESFET.- 5.3.3 Mesa Epitaxial/Implanted E-MESFET.- 5.3.4 Self-Aligned Epitaxial D-MESFET.- 5.3.5 Planar Implanted E-JFET.- 5.3.6 Planar Implanted D-MESFET.- 5.3.7 Fabrication Technology Review: Conclusions.- 5.3.8 Planar VLSI Compatible Fabrication Technology.- 5.4 Performance Results for GaAs Digital ICs.- 5.5 Summary, Conclusions and Projections.- Appendix: Nonlinear Switching Analysis for PD?d.- Dependence on ?d and FET K-Value.- References.- 6. VLSI Architecture.- 6.1 VLSI Technology Basis.- 6.2 VLSI Device Architecture.- 6.2.1 Device Architecture Issues.- 6.2.2 VLSI Device Design Example.- 6.2.3 Example VLSI Designs.- 6.3 VLSI System Architecture.- 6.3.1 Signal Processing Algorithms.- 6.3.2 Signal Processing Architectures.- 6.3.3 Implementation.- 6.3.4 Adaptive Sonar Equalizer Design Example.- 6.4 VLSI Architecture Case Study.- 6.4.1 Basic Concepts.- 6.4.2 DBF Emulation Model.- 6.4.3 VLSI for the Real-Time DBF System.- 6.5 Conclusion.- References.- 7. VLSI Applications and Testing.- 7.1 VLSI Applications.- 7.1.1 Telephone Echo Canceller.- 7.1.2 Narrow Band Voice Channel Processing.- 7.1.3 Dual Tone Multifrequency (DTMF) Receiver.- 7.1.4 TDM-FDM Transmultiplexer.- 7.1.5 Synthetic Aperture Radar (SAR).- 7.1.6 VLSI Memories.- 7.2 VLSI Testing.- 7.2.1 Design for Testing.- 7.3 Conclusion.- References.- 8. VHSIC Technology and Systems.- 8.1 IC Progress.- 8.2 Throughput Capacity.- 8.3 Defense Systems.- 8.4 The VHSIC Program.- 8.4.1 Approach.- 8.4.2 Schedule.- 8.5 Example Brassboard Systems.- 8.5.1 Command, Control and Communications.- 8.5.2 Radar.- 8.5.3 Electronic Warfare.- 8.5.4 Image Processing.- 8.5.5 General-Purpose Computers.- 8.6 Scaling to Smaller Dimensions: Benefits and Barriers.- 8.6.1 Benefits.- 8.6.2 Negative Effects.- 8.6.3 Noise Margins.- 8.6.4 Electromagnetic Interference.- 8.6.5 Soft Errors.- 8.6.6 Radiation Hardness.- 8.6.7 Economical Lithography.- 8.7 Computer-Aided Design.- 8.7.1 The Increasing Design Problem.- 8.7.2 The Macrocell Approach.- 8.8 Testing.- 8.9 Substrates.- 8.10 Summary.- References.- 9. VLSI in Other Countries.- 9.1 Past Major Semi conductor Programs.- 9.1.1 Past Developments in The United States.- 9.1.2 Past Developments in Japan.- 9.2 Present National Semiconductor Programs.- 9.2.1 United Kingdom.- 9.2.2 France.- 9.2.3 Federal Republic of Germany.- 9.2.4 Italy.- 9.2.5 The Netherlands.- 9.2.6 Japan.- 9.2.7 Korea.- 9.3 Future Prospects.- References.- Additional References.- Additional References.