Produktbild: Silicon Carbide

Silicon Carbide Recent Major Advances

Fr. 360.00

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Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

07.12.2012

Herausgeber

Wolfgang J. Choyke + weitere

Verlag

Springer Berlin

Seitenzahl

899

Maße (L/B/H)

23.5/15.5/5.3 cm

Gewicht

1460 g

Auflage

2004

Sprache

Englisch

ISBN

978-3-642-62333-2

Beschreibung

Portrait

Gerhard Pensl works with his group on the growth of SiC single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi-crystalline Si for solar cells. He is Academic Director at the Institute of Applied Physics at the University Erlangen-Nürnberg, Germany, and has authored over 300 scientific publications.

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

07.12.2012

Herausgeber

Verlag

Springer Berlin

Seitenzahl

899

Maße (L/B/H)

23.5/15.5/5.3 cm

Gewicht

1460 g

Auflage

2004

Sprache

Englisch

ISBN

978-3-642-62333-2

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: GPSR Kontakt

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  • Produktbild: Silicon Carbide
  • Zero- and Two-Dimensional Native Defects.- Defect Migration and Annealing Mechanisms.- Hydrogen in SiC.- Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes.- Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation.- Defect Formation and Reduction During Bulk SiC Growth.- High Nitrogen Doping During Bulk Growth of SiC.- Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas.- Low-Defect 3C-SiC Grown on Undulant-Si (001) Substrates.- New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide.- Formation of SiC Thin Films by Ion Beam Synthesis.- Atomic Structure of SiC Surfaces.- The Continuum of Interface-Induced Gap States — The Unifying Concept of the Band Lineup at Semiconductor Interfaces — Application to Silicon Carbide.- Contributions to the Density of Interface States in SiC MOS Structures.- Properties of Nitrided Oxides on SiC.- Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO2 Interface.- Optical Properties of SiC: 1997–2002.- Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC.- Electronic Structure of Deep Defects in SiC.- Phosphorus-Related Centers in SiC.- Hall Scattering Factor for Electrons and Holes in SiC.- Radiotracer Deep Level Transient Spectroscopy.- Vacancy Defects Detected by Positron Annihilatio.- Characterization of Defects in SiC Crystals by Raman Scattering.- Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy.- Synchrotron White Beam X-Ray Topography and High Resolution X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Device Structures.- Ohmic Contacts for Power Devices on SiC.- Micromachining of SiC.- Surface Preparation Techniques for SiCWafers.- Epitaxial Growth and Device Processing of SiC on Non-Basal Planes.- SiC Power Bipolar Transistors and Thyristors.- High Voltage SiC Devices.- Power MOSFETs in 4H-SiC: Device Design and Technology.- Normally-Off Accumulation-Mode Epi-Channel Field Effect Transistor.- Development of SiC Devices for Microwave and RF Power Amplifiers.- Advances in SiC Field Effect Gas Sensors.