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  • Produktbild: Polycrystalline Silicon for Integrated Circuit Applications
  • Produktbild: Polycrystalline Silicon for Integrated Circuit Applications
Band 45

Polycrystalline Silicon for Integrated Circuit Applications

Aus der Reihe The Springer International Series in Engineering and Computer Science

Fr. 191.00

inkl. gesetzl. MwSt., Versandkostenfrei

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

05.10.2011

Verlag

Springer Us

Seitenzahl

290

Maße (L/B/H)

23.5/15.5/1.7 cm

Gewicht

470 g

Auflage

Softcover reprint of the original 1st ed. 1988

Sprache

Englisch

ISBN

978-1-4612-8949-4

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

05.10.2011

Verlag

Springer Us

Seitenzahl

290

Maße (L/B/H)

23.5/15.5/1.7 cm

Gewicht

470 g

Auflage

Softcover reprint of the original 1st ed. 1988

Sprache

Englisch

ISBN

978-1-4612-8949-4

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: GPSR Kontakt

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  • Produktbild: Polycrystalline Silicon for Integrated Circuit Applications
  • Produktbild: Polycrystalline Silicon for Integrated Circuit Applications
  • 1 Deposition.- 1.1 Introduction..- 1.2 Thermodynamics and kinetics.- 1.3 The deposition process.- 1.4 Gas-phase and surface processes.- 1.4.1 Convection.- 1.4.2 The boundary layer.- 1.4.3 Diffusion through the boundary layer.- 1.4.4 Reaction.- 1.4.5 Steady state.- 1.5 Reactor geometries.- 1.5.1 Low-pressure, hot-wall reactors.- 1.5.2 Atmospheric-pressure, cold-wall reactor.- 1.6 Reaction.- 1.6.1 Decomposition of silane.- 1.6.2 Surface adsorption.- 1.6.3 Deposition rate.- 1.6.4 Rate-limiting step.- 1.7 Deposition of doped films.- 1.7.1 n-type deposited films.- 1.7.2 p-type deposited films.- 1.7.3 Electrostatic model.- 1.8 Step coverage.- 1.9 Enhanced deposition techniques.- 1.10 Summary.- 2 Structure.- 2.1 Nucleation.- 2.1.1 Amorphous surfaces.- 2.1.2 Single-crystal surfaces.- 2.2 Surface diffusion and structure.- 2.2.1 Subsurface rearrangement.- 2.3 Evaluation techniques.- 2.4 Grain structure.- 2.5 Grain orientation.- 2.6 Optical properties.- 2.6.1 Index of refraction.- 2.6.2 Absorption coefficient.- 2.6.3 Ultraviolet surface reflectance.- 2.6.4 Use of optical properties for film evaluation.- 2.7 Etch rate.- 2.8 Stress.- 2.9 Thermal conductivity.- 2.10 Structural stability.- 2.10.1 Recrystallization mechanisms.- 2.10.2 Undoped or lightly doped films.- 2.10.3 Heavily doped films.- 2.10.4 Implant channeling.- 2.10.5 Amorphous films.- 2.11 Epitaxial realignment.- 2.12 Summary.- 3 Dopant Diffusion and Segregation.- 3.1 Introduction.- 3.2 Diffusion mechanism.- 3.2.1 Diffusion along a grain boundary.- 3.2.2 Diffusion in polycrystalline material.- 3.3 Diffusion in polysilicon.- 3.3.1 Arsenic diffusion.- 3.3.2 Phosphorus diffusion.- 3.3.3 Antimony diffusion.- 3.3.4 Boron diffusion.- 3.3.5 Limits of applicability.- 3.4 Diffusion from polysilicon.- 3.5 Interaction with metals.- 3.5.1 Aluminum.- 3.5.2 Other metals and silicides.- 3.6 Dopant segregation at grain boundaries.- 3.6.1 Theory of segregation.- 3.6.2 Experimental data.- 3.7 Summary.- 4 Oxidation.- 4.1 Introduction.- 4.2 Oxide growth on polysilicon.- 4.2.1 Oxidation of undoped films.- 4.2.2 Oxidation of doped films.- 4.2.3 Effect of grain boundaries.- 4.2.4 Effects of device geometry.- 4.2.5 Oxide-thickness evaluation.- 4.3 Conduction through oxide on polysilicon.- 4.3.1 Interface features.- 4.3.2 Deposition conditions.- 4.3.3 Oxidation conditions.- 4.3.4 Dopant concentration and annealing.- 4.3.5 Carrier trapping.- 4.4 Summary.- 5 Electrical Properties.- 5.1 Introduction.- 5.2 Undoped polysilicon.- 5.3 Moderately doped polysilicon.- 5.3.1 Carrier trapping at grain boundaries.- 5.3.2 Carrier transport.- 5.3.3 Trap concentration and energy distribution.- 5.3.4 Thermionic field emission.- 5.3.5 Grain-boundary barriers.- 5.3.6 Limitations of models.- 5.3.7 Segregation and trapping.- 5.3.8 Summary.- 5.4 Grain-boundary modification.- 5.5 Heavily doped polysilicon films.- 5.5.1 Solid solubility.- 5.5.2 Method of doping.- 5.5.3 Stability.- 5.5.4 Mobility.- 5.5.5 Future trends.- 5.6 Minority-carrier properties.- 5.6.1 Lifetime.- 5.6.2 Switching characteristics.- 5.7 Summary.- 6 Applications.- 6.1 Introduction.- 6.2 Silicon-gate technology.- 6.2.1 Threshold voltage.- 6.2.2 Polysilicon interconnections.- 6.2.3 Process compatibility.- 6.2.4 New structures.- 6.2.5 Gettering.- 6.2.6 Gate-oxide reliability.- 6.3 Nonvolatile memories.- 6.4 High-value resistors.- 6.5 Fusible links.- 6.6 Polysilicon contacts.- 6.6.1 Reduction of junction spiking.- 6.6.2 Diffusion from polysilicon.- 6.7 Bipolar integrated circuits.- 6.7.1 Vertical npn bipolar transistors.- 6.7.2 Lateral pnp bipolar transistors.- 6.8 Device isolation.- 6.8.1 Dielectric isolation.- 6.8.2 Epi-poly isolation.- 6.8.3 Trench isolation.- 6.8.4 Summary.- 6.9 Trench capacitors.- 6.10 Polysilicon diodes.- 6.11 Polysilicon transistors.- 6.12 Polysilicon sensors.- 6.13 Summary.