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Produktbild: Physical and Technical Problems of SOI Structures and Devices
Band 4

Physical and Technical Problems of SOI Structures and Devices

Aus der Reihe NATO Science Partnership Subseries: 3

Fr. 72.90

inkl. gesetzl. MwSt., Versandkostenfrei

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

21.10.2012

Herausgeber

J.-P. Colinge + weitere

Verlag

Springer Netherland

Seitenzahl

290

Maße (L/B/H)

24/16/1.7 cm

Gewicht

489 g

Auflage

Softcover reprint of the original 1st ed. 1995

Sprache

Englisch

ISBN

978-94-010-4052-5

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

21.10.2012

Herausgeber

Verlag

Springer Netherland

Seitenzahl

290

Maße (L/B/H)

24/16/1.7 cm

Gewicht

489 g

Auflage

Softcover reprint of the original 1st ed. 1995

Sprache

Englisch

ISBN

978-94-010-4052-5

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: GPSR Kontakt

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  • Produktbild: Physical and Technical Problems of SOI Structures and Devices
  • Preface. Contributors. SOI materials: Low dose SIMOX for ULSI applications; A.J. Auberton-Hervé, et al. Why porous silicon for SOI? V.P. Bondarenko, A.M. Dorofeev. Defect engineering in SOI films prepared by zone-melting recrystallization; E.I. Givargizov, et al. Ion beam processing for SOI; W. Skorupa. Semi-insulating oxygen-doped silicon by low temperature chemical vapor deposition for SOI applications; J.C. Sturm, et al. Direct formation of thin film nitride structures by high intensity ion implantation of nitrogen into silicon; R. Yankov, F. Komarov. Stimulated technology for implanted SOI formation; V.G. Litovchenko, et al. Behaviour of oxygen and nitrogen atoms sequentially implanted into silicon; A.B. Danilin. SOI fabrication by silicon wafer bonding with the help of glass-layer fusion; N.I. Koshelev, et al. Crystallization of a-Si films on glasses by multipulse- excimer-laser technique; A.B. Limanov. Microzone laser recrystallized polysilicon layers on insulator; A.A. Druzhinin, et al. SOI materials characterization techniques: Electrical characterization techniques for SOI materials and devices; S. Christoloveanu. The defect structure of buried oxide layers in SIMOX and BESOI structures; A.G. Revesz, H.L. Hughes. IR study of buried layer structure on different stages of technology; V.G. Litovchenko, et al. Optical investigation of silicon implanted with high doses of oxygen and hydrogen ions; P.A. Aleksandrov, et al. Electrical properties of ZMR SOI structures: characterization techniques and experimental results; T.E. Rudenko et al. SOI Devices: Fabrication and characterisation of poly-Si TFTs on glass; S.D. Brotherton, et al. Hot carrier reliability of SOI structures; D.E. Ioannou. NovelTESC bipolar transistor approach for a thin-film SOI substrate; C.J. Patel, et al. Problems of radiation hardness of SOI structures and devices; A.N. Nazarov. Fabrication of SIMOX structures and ICs test elements; G.G. Voronin, et al. Low-frequency noise characterization of SOI depletion-mode p- MOSFETS; N.B. Lukyanchikova, et al. SOI circuits: SOI devices and circuits: an overview of potentials and problems; J.-P. Colinge. 1.2 &mgr; CMOS/SOI on porous silicon; V.P. Bondarenko, et al. SOI pressure sensors based on laser recrystallized polysilicon; V.A. Voronin, et al. Index.