2D Material/Group-III Nitride Heterostructures Fundamentals, Fabrication, and Applications
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- Englisch ausgewählt
Fr. 218.00
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Beschreibung
Produktdetails
Einband
Gebundene Ausgabe
Erscheinungsdatum
22.11.2026
Abbildungen
XIII, 341 p. 189 illus., 177 illus. in color.
Verlag
Springer SingaporeSeitenzahl
341
Maße (L/B)
23.5/15.5 cm
Sprache
Englisch
ISBN
978-981-9224-99-9
This book focuses on III-nitride semiconductors (e.g., GaN, AlN), the cornerstone of modern optoelectronics and power electronics. Despite their transformative impact, these materials face inherent limitations.
A pioneering solution lies in integrating them with two-dimensional (2D) materials like graphene. These hybrid heterostructures offer critical advantages:
· Enhanced Compatibility: 2D materials alleviate lattice mismatch and improve thermal management.
· Tailored Properties: They enable precise control over electronic and optical characteristics.
· New Functionality: The synergy unlocks novel applications in flexible and neuromorphic computing devices.
Consolidating a decade of global research and groundbreaking work from our group, this book addresses key challenges and serves as an essential resource for professionals, researchers, and students in materials science and microelectronics.
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